1) Which among the below mentioned assertions is not a considerable factor to design a biasing circuit?
a. Position of Q point
b. Value of collector current at Q point
c. Maximum output swing without generating any distortion
d. Transistor biasing in the circular portion of its transfer characteristics
|
Answer
Explanation
Related Ques
|
ANSWER: Transistor biasing in the circular portion of its transfer characteristics
Explanation:
No explanation is available for this question!
|
|
2) Where should be the position of Q point on the load line, if the transistor is used for amplification purpose?
a. At the point of inception (initial point)
b. At the center
c. At the eventual point (final point)
d. None of the above
|
3) The slope of AC load line is usually ____________
a. Higher than slope of DC load line
b. Smaller than slope of DC load line
c. Similar as that of DC load line
d. None of the above
|
4) Which among the below mentioned parameters of transistors is/are likely to get affected or exhibit/s variations due to increase in temperature?
a. Base-to-Emitter voltage (VBE)
b. Reverse Saturation Current ( ICBO)
c. Current Gain (βdc)
d. All of the above
|
5) Which capacitor is used to block DC portion by allowing to pass only AC portion of the amplified signal to load?
a. Input Coupling Capacitor
b. Bypass Capacitor
c. Output Coupling Capacitor
d. All of the above
|
6) What is the phase-shift between input and output voltages of CE amplifier?
a. 90°
b. 120°
c. 180°
d. 270°
|
7) Which among the below assertions is not a salient feature/ property of CE amplifier?
a. High voltage gain
b. High current gain
c. High input resistance
d. High output resistance
|
8) What does an arrow indicate in the below drawn schematic for frequency response curve of RC coupled amplifier?
a. Ideal Frequency Response
b. Practical Frequency Response
c. Both a and b
d. None of the above
|
9) Which region/s in frequency response curve of an amplifier maintains the constant level of gain and output voltage?
a. Low Frequency Region
b. Mid Frequency Region
c. High Frequency Region
d. All of the above
|
10) What should be the gain of an amplifier at 20 kHz if the half power frequencies are fL = 20 Hz and fH = 15 kHz along with mid band gain = 80?
a. 28.28
b. 48.07
c. 62.47
d. 78.77
|
11) Why do the internal capacitances of transistor at low frequencies treated as open circuits by completely neglecting their effects in analysis?
a. Due to high reactance
b. Due to low reactance
c. Due to moderate reactance
d. None of the above
|
12) Which resistance in hybrid π model of transistor represents the bulk resistance present between the external base terminal and the virtual base?
a. Collector-to-emitter resistance (rce)
b. Base spreading resistance (ŕbb)
c. Virtual base to emitter resistance (ŕbe)
d. None of the above
|
13) Which capacitance/s in hybrid π model represent/s the storage of excess minority carriers at the base emitter junction?
a. Diffusion capacitance
b. Transition capacitance
c. Both a and b
d. None of the above
|
14) Which among the following plays a cardinal role in providing the transition capacitance in hybrid π model?
a. Forward biased base-emitter junction
b. Reverse-biased collector base junction
c. Forward biased collector base junction
d. Reverse-biased base-emitter junction
|
15) Which among the following parameter/s increase/s due to positive feedback?
A. Input voltage
B. Output Voltage
C. Noise
D. Voltage Gain
a. A & B
b. Only C
c. B & D
d. A, B, C & D
|
16) What should be the value of input resistance for an ideal voltage amplifier circuit?
a. Zero
b. Unity
c. Infinity
d. Unpredictable
|
17) Which among the below specified conditions is responsible to drive a low resistance load by the current amplifier circuit?
a. Rs >> Ri
b. R0 >> RL
c. Rs << Ri
d. R0 << RL
|
18) Which among the following parameters acts as an initiator for the operation of an oscillator in the absence of input signal?
a. Noise voltage
b. Noise power
c. Noise temperature
d. Noise figure
|
19) Why is the practical value of | Aβ | considered or adjusted to be slightly greater than '1'?
a. To compensate for noise voltage
b. To compensate for phase shifting of two relevant signals upto 180°
c. To compensate for non-linearities existing in the circuit
d. To compensate for the change in feedback voltage
|
Answer
Explanation
Related Ques
|
ANSWER: To compensate for non-linearities existing in the circuit
Explanation:
No explanation is available for this question!
|
|
20) Multivibrators belong to the category of _____________
a. Square wave oscillators
b. Triangular wave oscillators
c. Ramp wave oscillators
d. Sinusoidal oscillators
|
21) Which among the following does not belong to the category of LC oscillators?
a. Hartley oscillator
b. Colpitt's oscillator
c. Clapp oscillator
d. Wein bridge oscillator
|
22) What is/ are the necessity /ies of using a vertical structure in Power BJTs?
a. Increase in cross-sectional area to allow the flow of device current
b. Reduction in on-state power dissipation of transistor
c. Reduction in thermal resistance to keep the problem of power dissipation under control
d. All of the above
|
23) The n_region in a vertical cross-section of a typical n-p-n bipolar power transistor is also known as _________
a. Emitter drift region
b. Base drift region
c. Collector drift region
d. None of the above
|
24) Which is/are the major drawback/s of including an additional n__drift layer in a typical n-p-n bipolar power transistor?
a. Increase in on-state device resistance by increasing on-state power loss
b. Increase in on-state device resistance by decreasing on-state power loss
c. Increase in on-state device resistance by completely stabilizing the level of on-state power loss
d. All of the above
|
Answer
Explanation
Related Ques
|
ANSWER: Increase in on-state device resistance by increasing on-state power loss
Explanation:
No explanation is available for this question!
|
|
25) Subthreshold current is basically a drain current that flows only when __________
a. VGS is slightly greater than VT
b. VGS is slightly less than VT
c. VGS is exactly equal to VT
d. None of the above
|
26) Which type of breakdown can be prevented by adopting a reverse-biased gate protecting diode on input side of MOSFET?
a. Avalanche breakdown
b. Punch through breakdown
c. Snapback breakdown
d. Static Charge Breakdown
|
27) Near-avalanche breakdown in MOSFET is an ultimate outcome of _________
a. First order effects
b. Second order effects
c. Third order effects
d. None of the above
|
28) The output signal generated corresponding to the magnified input signal by a linear amplifier is _________
A. Larger in size
B. Smaller in size
C. Similar in shape as that of input signal
D. Different in shape as that of input signal
a. A & C
b. B & D
c. B & C
d. A & D
|
29) Which among the below stated consequences occur in the negative half-cycle during the operation of MOSFET as an amplifier?
a. Variation in VGS sinusoidally below VGSQ
b. Variation in ID sinusoidally below IDQ
c. Variation in voltage drop IDRD below its Q-point value
d. All of the above
|
30) What would happen if 180° phase shifted signal between input voltage (Vi) and drain-to-source voltage (VGS) will be passed through the output coupling capacitor during the operation of MOSFET as an amplifier?
a. DC value will be reduced to unity
b. DC value will be reduced to zero
c. DC value will be reduced to infinity
d. None of the above
|
