# Electronic Devices & Circuits - Electronic Engineering (MCQ) questions & answers

Dear Readers, Welcome to Electronic Devices & Circuits multiple choice questions and answers with explanation. These objective type Electronic Devices & Circuits questions are very important for campus placement test, semester exams, job interviews and competitive exams like GATE, IES, PSU, NET/SET/JRF, UPSC and diploma.

Specially developed for the Electronic Engineering freshers and professionals, these model questions are asked in the online technical test and interview of many companies.

These tutorial are also important for your viva in university exams like Anna university, Pune, VTU, UPTU, CUSAT etc.

1)   The value of transconductance decreases in simplified low frequency equivalent circuit of n-channel MOSFET due to increase in the value of _______
- Published on 24 Sep 15

a. Source resistance
c. Both a and b
d. None of the above
 Answer  Explanation  Related Ques ANSWER: Source resistance Explanation: No explanation is available for this question!

2)   What is the effect of MOSFET biasing in the saturation region especially while representing the internal resistances and capacitances in n-channel E-MOSFET configuration?
- Published on 24 Sep 15

a. Channel gets pinched off at the drain by increasing the value of Cgd
b. Channel gets pinched off at the source by increasing the value of Cgd
c. Channel gets pinched off at the drain by decreasing the value of Cgd upto zero
d. Channel gets pinched off at the source by decreasing the value of Cgd
 Answer  Explanation  Related Ques ANSWER: Channel gets pinched off at the drain by decreasing the value of Cgd upto zero Explanation: No explanation is available for this question!

3)   Which among the following are specifically the advantages of bipolar design technology?

A. High input resistance at low frequencies
B. Zero input bias current
C. High voltage gain
D. High value of transconductance

- Published on 24 Sep 15

a. A & B
b. A & C
c. B & D
d. C & D
 Answer  Explanation  Related Ques ANSWER: C & D Explanation: No explanation is available for this question!

4)   Which condition is applicable for a body to be more positive than source in a small signal equivalent circuit of N-type MOSFET inclusive of body effect?
- Published on 24 Sep 15

a. Vbs > 0
b. Vbs < 0
c. Vbs = 0
d. None of the above
 Answer  Explanation  Related Ques ANSWER: Vbs > 0 Explanation: No explanation is available for this question!

5)   Which among the below mentioned devices acts as a driver in CMOS Inverter Circuit?
- Published on 24 Sep 15

a. PMOS
b. NMOS
c. Both a and b
d. None of the above
 Answer  Explanation  Related Ques ANSWER: NMOS Explanation: No explanation is available for this question!

6)   Biasing of D-MOSFET in saturation or non-saturation region while using with depletion load device, specifically depends on ______
- Published on 24 Sep 15

a. VDD & Rs
b. VDD & VDS
c. VDD & ID
d. ID & Rs
 Answer  Explanation  Related Ques ANSWER: VDD & Rs Explanation: No explanation is available for this question!

7)   What is the value of gate-to-source voltage (VGS) for the circuit diagram shown below?
- Published on 24 Sep 15

a. 1.5 V
b. 2.9 V
c. 3.5 V
d. 4.9 V
 Answer  Explanation  Related Ques ANSWER: 2.9 V Explanation: No explanation is available for this question!

8)   Which resistance plays a significant role in stabilization of Q-point for self-biasing circuit of BJT?
- Published on 24 Sep 15

a. Emitter resistance
b. Collector resistance
c. Source resistance
d. Drain resistance
 Answer  Explanation  Related Ques ANSWER: Emitter resistance Explanation: No explanation is available for this question!

9)   What is the significance of adopting an interdigitated structure of power transistors?
- Published on 24 Sep 15

a. Prevention of current crowding
b. Maintenance of reasonable current densities
c. Both a and b
d. None of the above
 Answer  Explanation  Related Ques ANSWER: Both a and b Explanation: No explanation is available for this question!

10)   Which among the below mentioned reasons is/are responsible for the occurrence of second breakdown phenomenon in power BJT?
- Published on 24 Sep 15

a. Large current
b. Distribution of current in a non-uniform manner
c. Excessive power dissipation
d. All of the above
 Answer  Explanation  Related Ques ANSWER: All of the above Explanation: No explanation is available for this question!

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