Drawback of adding n__drift layer in n-p-n bipolar power transistor

Q.  Which is/are the major drawback/s of including an additional  n__drift layer in a typical n-p-n bipolar power transistor?
- Published on 23 Sep 15

a. Increase in on-state device resistance by increasing on-state power loss
b. Increase in on-state device resistance by decreasing on-state power loss
c. Increase in on-state device resistance by completely stabilizing the level of on-state power loss
d. All of the above

ANSWER: Increase in on-state device resistance by increasing on-state power loss

Related Content

 

    Discussion

  • Satyawati   -Posted on 05 Oct 15
    In addition to the logic level transistor, the structure of power transistor comprises an additional layer of n- drift region.

    As the doping level is very low, the n- drift region increases the voltage blocking capacity of transistor. Hence, the width of n- drift layer plays a crucial role in determining the breakdown voltage of power transistor.

    Insertion or an addition of this collector drift region results in increasing the on state device resistance. As the level of on state resistance goes on increasing, the on state power loss also increases in power transistor.

➨ Post your comment / Share knowledge


Enter the code shown above:
 
(Note: If you cannot read the numbers in the above image, reload the page to generate a new one.)
▲