Electronic Devices & Circuits - GATE practice papers - Electronics & Communication for Q. 495

Q.  Consider the below mentioned assertions :

A1 : Increase in doping level of p-type moves EF towards the centre
A2 : Increase in doping level of p-type moves EF away from the centre
A3: Increase in doping level of p-type results in downward shifting in EF
A4 : Increase in doping level of p-type results in an upward shifting in EF

Which among them is/are correct in accordance to the existence of fermi-level effect in P-type semiconductor?
(Marks : 02)
- Published on 19 Oct 15

a. A1 & A3
b. A2 & A4
c. A1 & A4
d. A2 & A3

ANSWER: A1 & A3
 
Fermi-Level in P-type semiconductor occurs exactly above the acceptor energy level. However, by increasing the addition of impurity during the existence of Fermi-level effect results in the downward shifting of p-type in fermi-level energy (EF) .Besides these, it also moves towards the centre with the rise in temperature level.

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