Electronic Devices & Circuits - GATE practice papers - Electronics & Communication for Q. 496
Q. Consider the below mentioned statements.
A1. Reduction in channel width & cross-sectional area
A2. Reduction in current density of channel
Which among them are the possible consequences in JFET upon the application of drain-to-source voltage (VDS)? (Marks : 02)- Published on 19 Oct 15a. Only A1 is true
b. Both A1 & A2 are true but A2 is not a reason for A1
c. Both A1 & A2 are true but A2 is a reason for A1
d. Both A1 & A2 are false
ANSWER: Only A1 is true
JFET comprises a wedge-shaped channel & gate to source operates only under the revere biased condition. The reverse biasing of gate to source junction increases the input resistance of JFET.
Hence, the channel width cross-sectional area get reduced upon the application of drain to source voltage. This ultimately increases the channel current density.
