Increasing temperature effects on transistor parameters

Q.  Which among the below mentioned parameters of transistors is/are likely to get affected or exhibit/s variations due to increase in temperature?
- Published on 23 Sep 15

a. Base-to-Emitter voltage (VBE)
b. Reverse Saturation Current ( ICBO)
c. Current Gain (βdc)
d. All of the above

ANSWER: All of the above

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    Discussion

  • cosmos Lequlo    -Posted on 05 Nov 17
    how does temperature increase relates to collector current in BJTs
  • Satyawati   -Posted on 25 Sep 15
    In transistor,the junction temperature mainly depends on the quantity of current passing through it. As the temperature increases, various parameters of transistors exhibit variations. These parameters include – base-to-emitter voltage (VBE), current gain (βdc) & reverse saturation current (IICBO).
    Due to increase in temperature, base-to-emitter voltage (VBE) decreases & tends to change the Q-point. Since current gain is a function of collector current (Ic), variation in current gain also ultimately varies collector current.
    Reverse saturation current (IICBO) which flows due to minority charge carriers is also a function of collector current. So, change in reverse saturation current is also equally responsible in changing the collector current. However, VBE,, βdc & IICBO gets affected to greater extent due to increase in temperature value.

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