Voltage divider circuit- Thermal runaway prevention by stability condition

Q.  Which among the below specified conditions is applicable to prevent the occurrence of thermal runaway in voltage divider bias circuit?
- Published on 24 Sep 15

a. VCE < VCC / 2
b. VCE = VCC / 2
c. VCE > VCC / 2
d. None of the above

ANSWER: VCE < VCC / 2

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    Discussion

  • Alhassan Abubakar   -Posted on 08 Nov 22
    Clear explanation.v
  • Satyawati   -Posted on 25 Sep 15
    Thermal runaway is a cumulative process which can eventually damage the transistor due to excessive internal heating or increase in ambient temperature. It occurs due to increase in collector current beyond the maximum specified value.
    In addition to this, it also occurs due to excessive internal power dissipation above the maximum permissible value. Thermal runaway can be prevented by maintaining the condition of thermal stability in addition to the usage of heat sink.
    According to thermal stability condition, VCE should be less than Vcc/2 results in the Q-point operation at a safe level. Conversely, if the location of Q-point is at VCE > Vcc/2, then the transistor is more likely to get damaged due to thermal runaway.

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