1) What is the value of gate-to-source voltage (VGS) for the circuit diagram shown below?
a. 1.5 V
b. 2.9 V
c. 3.5 V
d. 4.9 V
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Answer
Explanation
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ANSWER: 2.9 V
Explanation:
No explanation is available for this question!
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2) Which type of breakdown can be prevented by adopting a reverse-biased gate protecting diode on input side of MOSFET?
a. Avalanche breakdown
b. Punch through breakdown
c. Snapback breakdown
d. Static Charge Breakdown
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Answer
Explanation
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ANSWER: Static Charge Breakdown
Explanation:
No explanation is available for this question!
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3) Subthreshold current is basically a drain current that flows only when __________
a. V GS is slightly greater than V T
b. V GS is slightly less than V T
c. V GS is exactly equal to V T
d. None of the above
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Answer
Explanation
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ANSWER: VGS is slightly less than VT
Explanation:
No explanation is available for this question!
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4) Near-avalanche breakdown in MOSFET is an ultimate outcome of _________
a. First order effects
b. Second order effects
c. Third order effects
d. None of the above
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Answer
Explanation
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ANSWER: Second order effects
Explanation:
No explanation is available for this question!
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5) Which type of breakdown effect gets enhanced due to parasitic BJT action along with increase in drain current solely by the reduction in size of MOSFET?
a. Near-avalanche breakdown
b. Snapback breakdown
c. Both a and b
d. None of the above
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Answer
Explanation
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ANSWER: Both a and b
Explanation:
No explanation is available for this question!
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6) Which among the below stated transistors operate in an active region for the purpose of amplification?
a. BJT
b. E-MOSFET
c. Both a and b
d. None of the above
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Answer
Explanation
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ANSWER: BJT
Explanation:
No explanation is available for this question!
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7) Under which category/region of the below specified regions does EMOSFET operate for switching-based applications?
a. Saturation & Cut-off
b. Active & Ohmic
c. Only Saturation
d. Ohmic & Cut-off
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Answer
Explanation
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ANSWER: Ohmic & Cut-off
Explanation:
No explanation is available for this question!
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8) Which resistance plays a significant role in stabilization of Q-point for self-biasing circuit of BJT?
a. Emitter resistance
b. Collector resistance
c. Source resistance
d. Drain resistance
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Answer
Explanation
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ANSWER: Emitter resistance
Explanation:
No explanation is available for this question!
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9) Biasing of D-MOSFET in saturation or non-saturation region while using with depletion load device, specifically depends on ______
a. V DD & R s
b. V DD & V DS
c. V DD & I D
d. I D & R s
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Answer
Explanation
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ANSWER: VDD & Rs
Explanation:
No explanation is available for this question!
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10) Which among the below mentioned devices acts as a driver in CMOS Inverter Circuit?
a. PMOS
b. NMOS
c. Both a and b
d. None of the above
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Answer
Explanation
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ANSWER: NMOS
Explanation:
No explanation is available for this question!
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